參數資料
型號: SML10SIC06YC
廠商: SEMELAB LTD
元件分類: 整流器
英文描述: 10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
封裝: HERMETIC SEALED, METAL PACKAGE-3
文件頁數: 1/2頁
文件大?。?/td> 160K
代理商: SML10SIC06YC
SILICON CARBIDE (SiC)
SCHOTTKY DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9109
Issue 2
Page 1 of 2
SML10SIC06YC
Hermetic Metal TO-257AA Package.
Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit
low forward voltage and superb high temperature performance.
Suitable for high-frequency hard switching applications,
where system efficiency and reliability are paramount.
No reverse recovery time due to absence of minority
carrier injection.
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (Per Diode, T
C = 25°C unless otherwise stated)
VR
DC Reverse Voltage
600V
VRRM
Repetitive Peak Reverse Voltage
600V
IF
DC Forward Current (TJ = 175°C)
10A
IFRM
Repetitive Peak Forward Current (1)
67A
IFSM
Surge Peak Forward Current (2)
250A
PD
Total Power Dissipation at
100W
Derate Above 25°C
0.5W/°C
TJ
Junction Temperature Range
-55 to +225°C
Tstg
Storage Temperature Range
-55 to +225°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
2.0
°C/W
Notes
(1)
(1) T
c = 25°C,
T
p = 10ms, Half Sine Wave, D = 0.3
(2)
(2) T
c = 25°C,
T
p = 10s
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