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參數(shù)資料
| 型號(hào)： | SML1001R1AN |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 60K |
| 代理商： | SML1001R1AN |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukSML
Parameter
901R1AN
1001R1AN
901R3AN
1001R3AN
Unit
Characteristic / Test Conditions / Part Number
Drain – Source Breakdown Voltage
Min.
1000
Typ.
Max.
Unit
LA B
S E M E
Prelim. 12/00
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STJ
TO3 Package Outline.
Dimensions in mm (Inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Derate above 25°C
Operating and Storage J unction Temperature
Range
SML1001R1AN / SML1001R3AN
SML901R1AN / SML901R3AN
(V
GS
= ±30V , V
DS
= 0V)
SML1001R1AN / SML901R1AN
SML1001R1AN / SML901R3AN
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
POWER MOS IV
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
900
1000
900
1000
9.5
8.5
38
34
±30
230
–55 to 150
V
A
A
V
W
°C
(V
GS
= 0V , I
D
= 250
m
A)
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
On State Drain Current
2
(V
DS
> I
D(ON)
x R
DS(ON)
Max , V
GS
= 10V)
Gate Threshold Voltage
Static Drain – Source On State Resistance
2
(V
GS
=10V , I
D
= 0.5 I
D
[Cont.])
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
900
250
1000
±100
9.5
8.5
2
4
1.1
1.3
V
m
A
nA
A
V
W
MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
STATIC ELECTRICAL RATINGS
(T
case
=25°C unless otherwise stated)
SML1001R1AN 1000V 9.5A
SML901R1AN
SML1001R3AN 1000V 8.5A
SML901R3AN
1.10
W
1.10
W
1.30
W
1.30
W
900V
9.5A
900V
8.5A
(V
GS
= 0V , V
DS
= V
DSS
)
(V
GS
= 0V , V
DS
= 0.8V
DSS
, T
C
= 125°C)
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| SML901R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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