參數(shù)資料
型號(hào)： SMF24CT1
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 5-Line Transient Voltage Suppressor Array
中文描述： 100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE
封裝： CASE 419B-02, SC-88, SC-70, 6 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 56K
代理商： SMF24CT1
SMF05C, SMF12C, SMF15C, SMF24C
http://onsemi.com
2
SMF05C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
5.0
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
6.2
7.2
V
Reverse Leakage Current
I
R
V
RWM
= 5 V
0.07
5.0
A
Clamping Voltage
V
C
I
PP
= 5 A (8 x 20 s Waveform)
9.8
V
Clamping Voltage
V
C
I
PP
= 8 A (8 x 20 s Waveform)
12.5
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
8.0
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
80
130
pF
SMF12C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
12
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
13.3
15
V
Reverse Leakage Current
I
R
V
RWM
= 12 V
0.01
1.0
A
Clamping Voltage
V
C
I
PP
= 3 A (8 x 20 s Waveform)
21
V
Clamping Voltage
V
C
I
PP
= 6 A (8 x 20 s Waveform)
23
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
6.0
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
40
60
pF
SMF15C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
15
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
17
19
V
Reverse Leakage Current
I
R
V
RWM
= 15 V
0.01
1.0
A
Clamping Voltage
V
C
I
PP
= 1 A (8 x 20 s Waveform)
23
V
Clamping Voltage
V
C
I
PP
= 5 A (8 x 20 s Waveform)
29
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
5.0
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
33
45
pF
SMF24C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
24
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
26.7
32
V
Reverse Leakage Current
I
R
V
RWM
= 24 V
0.01
1.0
A
Clamping Voltage
V
C
I
PP
= 1 A (8 x 20 s Waveform)
40
V
Clamping Voltage
V
C
I
PP
= 2.5 A (8 x 20 s Waveform)
44
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
2.5
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
21
25
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
相關(guān)PDF資料
PDF描述
SMF05C TVS Diode Array For ESD and Latch-Up Protection
SMF05CTC TVS Diode Array For ESD and Latch-Up Protection
SMF05CTG TVS Diode Array For ESD and Latch-Up Protection
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