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參數(shù)資料
| 型號： | SMF12CT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5−Line Transient Voltage Suppressor Array |
| 中文描述： | 100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | SMF12CT1G |
SMF05C, SMF12C, SMF15C, SMF24C
http://onsemi.com
2
SMF05C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
5.0
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
6.2
7.2
V
Reverse Leakage Current
I
R
V
RWM
= 5 V
0.07
5.0
A
Clamping Voltage
V
C
I
PP
= 5 A (8 x 20 s Waveform)
9.8
V
Clamping Voltage
V
C
I
PP
= 8 A (8 x 20 s Waveform)
12.5
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
8.0
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
80
130
pF
SMF12C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
12
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
13.3
15
V
Reverse Leakage Current
I
R
V
RWM
= 12 V
0.01
0.1
A
Clamping Voltage
V
C
I
PP
= 3 A (8 x 20 s Waveform)
21
V
Clamping Voltage
V
C
I
PP
= 6 A (8 x 20 s Waveform)
23
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
6.0
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
40
60
pF
SMF15C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
15
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
17
19
V
Reverse Leakage Current
I
R
V
RWM
= 15 V
0.01
1.0
A
Clamping Voltage
V
C
I
PP
= 1 A (8 x 20 s Waveform)
23
V
Clamping Voltage
V
C
I
PP
= 5 A (8 x 20 s Waveform)
29
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
5.0
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
33
45
pF
SMF24C ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
24
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
26.7
32
V
Reverse Leakage Current
I
R
V
RWM
= 24 V
0.01
1.0
A
Clamping Voltage
V
C
I
PP
= 1 A (8 x 20 s Waveform)
40
V
Clamping Voltage
V
C
I
PP
= 2.5 A (8 x 20 s Waveform)
44
V
Maximum Peak Pulse Current
I
PP
8 x 20 s Waveform
2.5
A
Capacitance
C
J
V
R
= 0 V, f = 1 MHz (Line to GND)
21
25
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
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