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參數(shù)資料
| 型號： | SMCJ75-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 0K |
| 代理商： | SMCJ75-E3 |
SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Document Number 88394
www.vishay.com
07-Jul-04
1
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 1500W
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
Cathode Band
Dimensions in inches
and (millimeters)
Features
Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
1500W peak pulse power capability with a 10/1000s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-214AB molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.007 oz., 0.21 g
Flammability: Epoxy is rated UL 94V-0
0.185 MAX.
(4.69 MAX.)
0.126 MIN.
(3.20 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320 REF
Mounting Pad Layout
Extended
Voltage
Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 1500
W
a 10/1000s waveform
(1)(2)
Peak pulse current with a 10/1000s waveform
(1)
IPPM
See Next Table
A
Peak forward surge current 8.3ms single half sine-wave (2)
IFSM
200
A
uni-directional only
Typical thermal resistance, junction to ambient (3)
RθJA
75
°C/W
Typical thermal resistance, junction to lead
RθJL
15
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
DO-214AB
(SMC J-Bend)
相關(guān)PDF資料 |
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| SMCJ188A-E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
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| SMCJ100A-E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ110CA-E3 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ120A-E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
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