參數(shù)資料
型號(hào): SMBTA05
廠商: SIEMENS A G
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN Silicon AF Transistors
中文描述: 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 144K
代理商: SMBTA05
Semiconductor Group
2
SMBTA 05
SMBTA 06
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 100 mA,
V
CE
= 1 V
V
BE
1.2
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
V
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBTA 05
SMBTA 06
V
(BR)CE0
60
80
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
μ
A
SMBTA 05
SMBTA 06
V
(BR)CB0
60
80
4
Emitter-base breakdown voltage
I
E
= 10
μ
A
Collector-base cutoff current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 60 V,
T
A
= 150 C
V
CB
= 80 V,
T
A
= 150 C
Collector cutoff current
V
CE
= 60 V
V
(BR)EB0
nA
nA
μ
A
μ
A
nA
SMBTA 05
SMBTA 06
SMBTA 05
SMBTA 06
I
CB0
100
100
20
20
100
DC current gain
1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
100
100
130
170
0.25
V
V
CEsat
I
CE0
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
f
T
100
AC characteristics
pF
C
obo
12
1)
Pulse test conditions:
t
300
μ
s,
D
=
2 %.
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