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參數(shù)資料
| 型號： | SMBT6427 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Darlington Transistor |
| 中文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 142K |
| 代理商： | SMBT6427 |
Semiconductor Group
2
SMBT 6427
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
Collector-base breakdown voltage
I
C
= 100
μ
A
Emitter-base breakdown voltage,
I
E
= 10
μ
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 C
Collector cutoff current
V
CE
= 30 V,
I
B
= 0
V
(BR)CE0
40
–
–
V
(BR)CB0
40
–
–
V
(BR)EB0
12
–
–
nA
μ
A
I
CB0
–
–
–
–
–
–
50
10
1
–
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 50 mA
, I
B
= 0.5 mA
I
C
= 500 mA,
I
B
= 0.5 mA
Base-emitter saturation voltage
1)
I
C
= 500 mA
, I
B
= 0.5 mA
Base-emitter voltage
I
C
= 50 mA
, V
CE
= 5 V
h
FE
10000
20000
14000
–
–
–
100000
200000
140000
V
V
CEsat
–
–
–
–
–
–
1.2
1.5
2.0
V
BEsat
nA
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
I
EB0
–
–
50
MHz
Transition frequency
I
C
= 50 mA
, V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 1 mA
, V
CE
= 5 V,
R
S
= 100 k
f
= 1 kHz to 15 kHz
f
T
130
–
–
pF
C
obo
–
–
7
AC characteristics
C
ibo
–
–
25
dB
NF
–
–
10
μ
A
I
CE0
V
BE(on)
–
–
1.75
1)
Pulse test conditions:
t
≤
300
μ
s,
D
≤
2 %.
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