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參數(shù)資料
| 型號： | SMBT5087 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Silicon Transistors |
| 中文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | SMBT5087 |
Nov-30-2001
2
SMBT5087
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 μA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0
Collector -base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 35 V,
I
E
= 0
V
CB
= 35 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain
1)
I
C
= 100 μA,
V
CE
= 5 V
I
C
= 1 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
Base emitter saturation voltage-
1)
I
C
= 10 mA,
I
B
= 1 mA
V
(BR)CEO
50
-
-
V
V
(BR)CBO
50
-
-
V
(BR)EBO
3
-
-
I
CBO
-
-
-
-
-
-
10
50
20
nA
nA
μA
h
FE
250
250
250
-
-
-
800
-
-
-
V
CEsat
-
-
0.3
V
V
BEsat
-
-
0.85
AC Characteristics
Transition frequency
I
C
= 0.5 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Short-circuit forward current transf. ratio
I
C
= 1 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 100 μA,
V
CE
= 5 V,
f
= 1 kHz,
f = 200
Hz
,
R
S
= 3
k
I
C
= 2 mA,
V
CE
= 5 V,
f
= 10HZ to 15kHz ,
R
S
= 10
k
f
T
40
-
-
MHz
C
cb
-
-
4
pF
h
21e
250
-
900
-
F
-
-
-
-
2
2
dB
1Puls test: t 300μs, D = 2%
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SMBT6427 | 制造商:Siemens 功能描述:500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| SMBT6428 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors |
| SMBT6428E6327 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 50V 0.2A 3-Pin SOT-23 T/R |
| SMBT6429 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors |
| SMBT70A | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
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