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參數(shù)資料
| 型號： | SMBT4124 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Switching Transistor |
| 中文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 97K |
| 代理商： | SMBT4124 |
Semiconductor Group
2
SMBT 4124
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA
Collector-base breakdown voltage
I
C
= 10
μ
A
Emitter-base breakdown voltage
I
E
= 10
μ
A
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
V
(BR)CE0
25
–
–
V
(BR)CB0
30
–
–
V
(BR)EB0
5
–
–
nA
I
CB0
–
–
50
–
DC current gain
I
C
= 2 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 50 mA
, I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 50 mA
, I
B
= 5 mA
h
FE
120
60
–
–
–
–
360
–
0.3
V
V
CEsat
V
BEsat
–
–
0.95
I
EB0
–
–
50
MHz
Transition frequency
I
C
= 10 mA
, V
CE
= 20 V,
f
= 100 MHz
Output capacitance
V
CB
= 5 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Small-signal current gain
I
C
= 1 mA
, V
CE
= 5 V,
f
= 1 kHz
f
T
300
–
–
pF
C
obo
–
–
4
AC characteristics
C
ibo
–
–
8
dB
Noise figure
I
C
= 0.1 mA
, V
CE
= 5 V,
f
= 10 Hz to 15 kHz
R
S
= 1 k
NF
–
–
5
–
h
fe
120
–
480
1)
Pulse test conditions:
t
≤
300
μ
s,
D
≤
2 %.
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| SMBT4126 | PNP Silicon Switching Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBT4126 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Switching Transistor |
| SMBT5086 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Transistors |
| SMBT5087 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Transistor |
| SMBT6427 | 制造商:Siemens 功能描述:500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| SMBT6428 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors |
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