參數(shù)資料
型號: SMBT3904UPN
廠商: INFINEON TECHNOLOGIES AG
英文描述: NPN/PNP Silicon Switching Transistor Array
中文描述: npn型/進(jìn)步黨硅開關(guān)晶體管陣列
文件頁數(shù): 3/7頁
文件大小: 217K
代理商: SMBT3904UPN
SMBT3904UPN
Aug-21-2002
3
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics per Transistor
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 100 μA,
V
CE
= 5 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
f
T
250
-
-
MHz
C
cb
-
-
4.5
pF
C
eb
-
-
10
h
11e
2
-
12
k
h
12e
0.1
-
10
10
-4
h
21e
100
-
400
-
h
22e
1
-
60
S
F
5
dB
-
-
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
=
1mA
t
d
-
-
35
ns
t
r
-
-
35
t
stg
-
-
225
t
f
-
-
75
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