參數(shù)資料
型號(hào)： SMBH1G75US60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： IGBT Module For Buck(Step Down) Converter(應(yīng)用于補(bǔ)償轉(zhuǎn)換器的絕緣柵雙極晶體管(IGBT)模塊)
中文描述： 75 A, 600 V, N-CHANNEL IGBT
封裝： 7PM-AA, 7 PIN
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 599K
代理商： SMBH1G75US60
Characteristics
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Symbol
BV
CES
Z
V
CES/
Z
T
J
V
GE(th)
I
CES
I
GES
V
CE
(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Min
600
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Typ
-
0.6
6
-
-
2.1
2.7
6150
600
180
170
130
230
82
3.2
1.6
4.8
-
330
70
130
Max
-
-
8.5
250
100
2.7
-
-
-
-
-
-
-
250
-
-
9.6
-
500
-
-
Units
V
V/
&
V
uA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
uS
nC
nC
nC
ELECTRICAL CHARACTERISTICS (IGBT PART)
(T
c
=25
&
,Unless Otherwise Specified)
Test Conditions
V
GE
= 0V , I
C
= 250
V
GE
= 0V , I
C
= 1mA
I
C
=75mA , V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
Ic=75A, V
GE
= 15V @Tc= 25
&
Ic=75A, V
GE
= 15V @Tc=100
&
V
GE
= 0V , f = 1
(
V
CE
= 30V
V
CC
= 300V , I
C
= 75A
V
GE
= 15V
R
G
= 8.2
n
Inductive Load
Vcc = 300V, V
GE
= 15V
@Tc = 100
&
Vcc = 300V
V
GE
= 15V
Ic = 75A
IGBT MODULE
SMBH1G75US60
Preliminary
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