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參數(shù)資料
| 型號： | SMBD7000XT |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | SMBD7000XT |
2007-03-28
2
SMBD7000/MMBD7000...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I(BR) = 100 A
V(BR)
100
-
V
Reverse current
VR = 50 V
VR = 100 V
VR = 50 V, TA = 150 °C
IR
-
0.3
0.5
100
A
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 150 mA
VF
550
670
-
750
-
700
820
1000
1100
1250
mV
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CT
-
2
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, measured at IR = 1mA,
RL = 100
trr
-
4
ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,
Ri = 50
Oscillograph: R = 50
, t
r = 0.35ns, C ≤ 1pF
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