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參數(shù)資料
| 型號(hào)： | SMB9.1C |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | SMB9.1C |
SMB SERIES
FEATURES
Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification
94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ps for
Uni-direction,less than 5.0ns for Bi-direction,form 0
Volts to BV min
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional
device none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
TJ
Operating Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +175
C
IFSM
Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)
100
AMPS.
UNIT
PM(AV)
5.0
WATTS
Steady State Power Dissipation at TL =75 C
PPK
WATTS
PEAK POWER DISSIPATION AT TA = 25 C,
TP = 1ms (Note 1,2)
SYMBOLS
VALUE
Minimum 600
C
CHARACTERISTICS
(JEDEC METHOD)
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
STAND-OFF VOLTAGE - 6.8 to 200 Volts
POWER DISSIPATION - 600 WATTS
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above TA= 25 C per fig.1.
2. Thermal Resistance junction to Lead
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
4. VF= 3.5V on SMB6.8 thru SMB90A devices and VF= 5.0V on SMB100 thru SMB200A devices.
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)
VF
SEE NOTE 4
Volts
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SMB
All Dimensions in millimeter
SMB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.05
0.20
2.01
2.62
0.76
1.52
C
B
A
H
E
F
G
D
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KSIB01
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