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參數(shù)資料
| 型號： | SMAJ550/61-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | SMAJ550/61-E3 |
Application Notes
Respect Thermal Resistance (PCB Layout) – as the temperature coefficient also contributes to the clamping voltage.
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature.
Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.
Clamping voltage is influenced by internal resistance – design approximation is 7V per 100mA slope.
Keep temperature of TVS lower than TOPSwitch as a recommendation.
Maximum current is determined by the maximum TJ and can be higher than 300mA.
Contact supplier for different clamping voltage / current arrangements.
Minimum breakdown voltage can be customized for other applications. Contact supplier.
TOPSwitch is a registered trademark of Power Integrations, Inc.
0
25
50
75
100
0
75
25
50
100
125
150
175
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
ercentage
,%
TA – Ambient Temperature (
°C)
Fig. 2 – Pulse Derating Curve
P
PPM
–
P
eak
Pulse
P
o
w
er
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td – Pulse Width (sec.)
100
s
1.0ms
10ms
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
0
50
100
150
I PPM
–
P
eak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value – IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t – Time (ms)
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
SMAJ530 and SMAJ550
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88391
2
03-Mar-03
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SMAJ550-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ550-E3/2G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ550-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ550-E3/5A | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ550-E3/61 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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