參數(shù)資料
型號： SM8S36A
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
封裝： PLASTIC PACKAGE-1
文件頁數(shù)： 1/5頁
文件大?。?/td> 111K
代理商： SM8S36A
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
Document Number: 88387
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Automotive Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
Patented PAR construction
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by
test condition)
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use
in
sensitive
electronics
protection
against
voltage transients induced by inductive load switching
and lighting, especially for automotive load dump
protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
PPPM (10 x 1000 s)
6600 W
PPPM (10 x 10 000 s)
5200 W
PD
8 W
IFSM
700 A
TJ max.
175 °C
DO-218AB
*Patent #'s:
4,980,315
5,166,769
5,278,095
Patented*
Note:
(1) Non-repetitive current pulse derated above TA = 25 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with 10/1000 s waveform
with 10/10 000 s waveform
PPPM
6600
5200
W
Power dissipation on infinite heatsink at TC = 25 °C (Fig. 1)
PD
8.0
W
Peak pulse current with 10/1000 s waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave
IFSM
700
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關PDF資料
PDF描述
SMA10 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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SMA110C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
SMA11CA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
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相關代理商/技術參數(shù)
參數(shù)描述
SM8S36A/2D 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SM8S36A-E3/2D 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SM8S36AHE3/2D 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8.0W 36V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SM8S36-E3/2D 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SM8S36HE3/2D 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8.0W 36V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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