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參數(shù)資料
| 型號： | SM6K2 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 3 POS MOLDED SIP SOCKET |
| 中文描述： | 開關(guān)（60V的，200毫安） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 88K |
| 代理商： | SM6K2 |
SM6K2
Transistors
Pulsed
V
GS
=
10V
10
1.0
0.01
1.0
0.1
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
DRAIN CURRENT : I
D
(A)
Fig.4 Static drain-source on-State
resistance vs. drain current (
Ι
)
S
O
D
(
)
Pulsed
V
GS
=
4V
10
1.0
0.01
1.0
0.1
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
DRAIN CURRENT : I
D
(A)
Fig.5 Static drain-source on-state
resistance vs. drain current (
ΙΙ
)
S
O
D
(
)
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
7
5
6
3
2
1
4
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : V
GS
(V)
O
D
(
)
S
Ta
=
25
°
C
Pulsed
I
D
=200mA
100mA
1.0
50
1.5
2.0
2.5
3.0
0
25
50
75
100 125 150
S
O
D
(
)
CHANNEL TEMPERATURE : Tch
(
°
C)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
25
I
D
=200mA
100mA
V
GS
=
10V
Pulsed
0.01
0.1
1
0.4
0.2
0.0
0.6
0.8
1.0
1.2
Pulsed
V
GS
=
0V
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
0.001
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.8 Reverse drain current vs.
source-drain voltage (
Ι
)
R
D
(
0.01
0.1
10
1
0.4
0.2
0.0
0.6
0.8
1.0
1.2
Pulsed
Ta
=
25
°
C
V
GS
=
10V
0V
0.001
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.9 Reverse drain current vs.
source-drain voltage (
ΙΙ
)
R
D
(
1
0.1
0.01
0.001
0.001
0.01
0.1
1
V
GS
=
10V
Pulsed
Fig.10 Forward transfer admittance
vs. drain current
F
(
DRAIN CURRENT : I
D
(A)
Ta
=
25
°
C
25
°
C
75
°
C
125
°
C
100
10
1
0.1
1
10
100
Ta
=
25
°
C
f
=
1MHz
V
GS
=
0V
Fig.11 Typical capacitance
vs. drain-source voltage
C
(
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Ciss
Coss
Crss
1000
10
100
1
1
10
100
1000
Ta
=
25
°
C
V
DD
=
30V
V
GS
=
10V
R
G
=
10
Pulsed
Fig.12 Switching characteristics
S
(
DRAIN CURRENT : I
D
(mA)
tr
tf
td(on)
td(off)
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