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參數(shù)資料
| 型號： | SM6JZ47 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 235K |
| 代理商： | SM6JZ47 |
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off
State
Current
I
DRM
V
DRM
= Rated
―
―
20
μA
I
T2 (+), Gate (+)
―
―
1.5
II
T2 (+), Gate (
)
―
―
1.5
III
T2 (
), Gate (
)
―
―
1.5
Gate Trigger Voltage
IV
V
GT
V
D
= 12V
R
L
= 20
T2 (
), Gate (+)
―
―
―
V
I
T2 (+), Gate (+)
―
―
30
II
T2 (+), Gate (
)
―
―
30
III
T2 (
), Gate (
)
―
―
30
SM6GZ47
SM6JZ47
IV
T2 (
), Gate (+)
―
―
―
I
T2 (+), Gate (+)
―
―
20
II
T2 (+), Gate (
)
―
―
20
III
T2 (
), Gate (
)
―
―
20
Gate Trigger
Current
SM6GZ47A
SM6JZ47A
IV
I
GT
V
D
= 12V
R
L
= 20
T2 (
), Gate (+)
―
―
―
mA
Peak On
State Voltage
V
TM
I
TM
= 9A
―
―
1.5
V
Gate Non
Trigger Voltage
V
GD
V
D
= Rated, Tc = 125°C
0.2
―
―
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
―
―
50
mA
Thermal Resistance
R
th (j
c)
Junction to Case
―
―
3.8
°C / W
SM6GZ47
SM6JZ47
―
300
―
Critical Rate of
Rise of Off
State
Voltage
SM6GZ47A
SM6JZ47A
dv / dt
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
―
200
―
V / μs
SM6GZ47
SM6JZ47
10
―
―
Critical Rate of
Rise of Off
State
Voltage at
Commutation
SM6GZ47A
SM6JZ47A
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di /dt) c =
3.3A / ms
4
―
―
V / μs
MARKING
* NUMBER
SYMBOL
MARK
* 1
TOSHIBA PRODUCT MARK
SM6GZ47, SM6GZ47A
M6GZ47
* 2
SM6JZ47, SM6JZ47A
M6JZ47
* 3
TYPE
SM6GZ47A, SM6JZ47A
A
* 4
Example
8A : January 1998
8B : Febrary 1998
8L : December 1998
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SM6JZ47(F) | 制造商:Toshiba America Electronic Components 功能描述:Thyristor TRIAC 600V 66A 3-Pin(3+Tab) TO-220NIS |
| SM6JZ47A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| SM6JZ47A(F) | 制造商:Toshiba America Electronic Components 功能描述:Thyristor TRIAC 600V 66A 3-Pin(3+Tab) TO-220NIS |
| SM6K2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Switching (60V, 200mA) |
| SM6K2_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Nch+Nch MOS FET |
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