參數(shù)資料
型號: SM532164084XAG6
元件分類: DRAM
英文描述: 16M X 32 EDO DRAM MODULE, 60 ns, SMA72
封裝: SIMM-72
文件頁數(shù): 12/24頁
文件大?。?/td> 127K
代理商: SM532164084XAG6
SM5321640U4XAUU
Preliminary
SMART
Modular Technologies
2
C
orporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA Tel:(510) 623-1231 Fax:(510) 623-1434 E-mail: info@smartm.com
Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK Tel: +44-1908 234030 Fax: +44-1908-234191
Asia/Pacic: Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia Tel: +604-3992909 Fax: +604-3992903
64MByte (16M x 32) DRAM Module - 16Mx4 based
72-pin SIMM
Features
Standard
:
JEDEC (5.0V FPM only)
Conguration
:
Non-parity
Access Time
:
50/60/70ns
Operation Mode
:
FPM/EDO
Operating Voltage
:
3.3/5.0V
Refresh
:
4K
Device Physicals
:
400mil TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 1.000"
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
Part Numbers
SM532164004XAUU
:
FPM, 5.0V
SM532164014XAUU
:
FPM, 3.3V
SM532164084XAUU
:
EDO, 5.0V
SM532164094XAUU
:
EDO, 3.3V
Note: Refer last page for all "U” options.
Notes : 1. A0~A11 to all DRAMs
2. WE# to all DRAMs.
3. OE# of all devices is grounded.
4. Each 16Mx8 Block comprises of two 16Mx4 DRAMs.
Functional Diagram
( All specications of this device are subject to change without notice.)
CAS1#
CAS0#
RAS0#
16Mx8
Block
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ0~DQ31
CAS2#
CAS3#
RAS2#
16Mx8
Block
16Mx8
Block
16Mx8
Block
VCC
VSS
Decoupling capacitors
to all devices.
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