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參數(shù)資料
| 型號： | SM532013011X4S6 |
| 元件分類： | DRAM |
| 英文描述： | 1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 177K |
| 代理商： | SM532013011X4S6 |
SM5320130UUXUUU
November 19, 1996
C
orporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA Tel:(510) 623-1231 Fax:(510) 623-1434 E-mail: info@smartm.com
Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK Tel: + 44-1908 234030 Fax: + 44-1908-234191
Asia/Pacic: Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia Tel: + 61-9-361-9705 Fax: + 61-9-361-9715
1
SMART
Modular Technologies
4MByte (1M x 32) DRAM Module - 1Mx16 based
72-pin SIMM
Features
Standard
:
JEDEC (5.0V FPM only)
Conguration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage
:
3.3/5.0V
Refresh
:
1K/4K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 0.850"(SOJ)/1.000”(TSOP)
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
Part Numbers
SM53201300UXUUU
:
FPM, 5.0V
SM53201301UXUUU
:
FPM, 3.3V
SM53201308UXUUU
:
EDO, 5.0V
SM53201309UXUUU
:
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320140U1XUUU
:
1Mx32,
1Mx4 based.
Notes : 1. A0~A11 to all DRAMs (A10 & A11 are NC for 1K refresh module).
2. WE# to all DRAMs.
3. OE# of all DRAMs is grounded.
Functional Diagram
RAS0#
CAS0#
CAS1#
1Mx16
DRAM
DQ0~DQ15
DQ16~DQ31
DQ0~DQ31
VCC
VSS
Decoupling capacitors
to all devices.
( All specications of this device are subject to change without notice.)
1Mx16
DRAM
RAS2#
CAS2#
CAS3#
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