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參數資料
| 型號： | SM3J45 |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 3 A, TRIAC, TO-220AB |
| 封裝： | LEAD FREE, 13-10G1A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 321K |
| 代理商： | SM3J45 |
SM3G45, SM3J45
2006-10-27
1
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3G45, SM3J45
AC POWER CONTROL APPLICATIONS
Repetitive Peak OffState Voltage: VDRM = 400V, 600V
R.M.S OnState Current: IT (RMS) = 3A
High Commutating (dv / dt)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM3G45
400
Repetitive Peak
OffState Voltage
SM3J45
VDRM
600
V
R.M.S OnState Current
(Full Sine Waveform Tc = 111°C)
IT (RMS)
3
A
30 (50Hz)
Peak One Cycle Surge On-State
Current (NonRepetitive)
ITSM
33 (60Hz)
A
I
2
t Limit Value
I
2
t
4.5
A
2
s
Critical Rate of Rise of
On-State Current
di / dt
50
A / s
Peak Gate Power Dissipation
PGM
5
W
Average Gate Power Dissipation
PG (AV)
0.5
W
Peak Gate Voltage
VGM
10
V
Peak Gate Current
IGM
2
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
TO-220AB
JEITA
―
TOSHIBA
13-10G1A
Weight: 2.0 g (typ.)
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