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參數(shù)資料
| 型號(hào)： | SM25JZ51 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 199K |
| 代理商： | SM25JZ51 |
SM25GZ51,SM25JZ51
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off
State Current
I
DRM
V
DRM
= Rated
―
―
20
μA
I
T2 (+) , Gate (+)
―
―
1.5
II
T2 (+) , Gate (
)
―
―
1.5
Gate Trigger Voltage
III
V
GT
V
D
= 12V
R
L
= 20
T2 (
) , Gate (
)
―
―
1.5
V
I
T2 (+) , Gate (+)
―
―
30
II
T2 (+) , Gate (
)
―
―
30
Gate Trigger Current
III
I
GT
V
D
= 12V
R
L
= 20
T2 (
) , Gate (
)
―
―
30
mA
Peak On
State Voltage
V
TM
I
TM
= 40A
―
―
1.5
V
Gate Non
Trigger Voltage
V
GD
V
D
= Rated, Tc = 125°C
0.2
―
―
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
―
―
60
mA
Thermal Resistance
R
th (j
c)
Junction to Case, AC
―
―
1.3
°C / W
Critical Rate of Rise of Off
State Voltage
dv / dt
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
―
300
―
V / μs
Critical Rate of Rise of Off
State Voltage
at Commutation
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
15A / ms
10
―
―
V / μs
MARKING
NUMBER
SYMBOL
MARK
SM25GZ51
M25GZ51
*1
TYPE
SM25JZ51
M25JZ51
*2
Example
8A : January 1998
8B : February 1998
8L : December 1998
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