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參數(shù)資料
| 型號(hào)： | SM16GZ47A |
| 廠商： | Toshiba Corporation |
| 英文描述： | AC POWER CONTROL APPLICATIONS |
| 中文描述： | 交流電源控制應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 213K |
| 代理商： | SM16GZ47A |
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off
State Current
I
DRM
V
DRM
= Rated
―
―
20
μA
I
T2 (+) , Gate (+)
―
―
1.5
II
T2 (+) , Gate (
)
―
―
1.5
III
T2 (
) , Gate (
)
―
―
1.5
Gate Trigger Voltage
IV
V
GT
V
D
= 12V,
R
L
= 20
T2 (
) , Gate (+)
―
―
―
V
I
T2 (+) , Gate (+)
―
―
30
II
T2 (+) , Gate (
)
―
―
30
III
T2 (
) , Gate (
)
―
―
30
SM16GZ47
SM16JZ47
IV
T2 (
) , Gate (+)
―
―
―
I
T2 (+) , Gate (+)
―
―
20
II
T2 (+) , Gate (
)
―
―
20
III
T2 (
) , Gate (
)
―
―
20
Gate Trigger
Current
SM16GZ47A
SM16JZ47A
IV
I
GT
V
D
= 12V,
R
L
= 20
T2 (
) , Gate (+)
―
―
―
mA
Peak On
State Voltage
V
TM
I
TM
= 25A
―
―
1.5
V
Gate Non
Trigger Voltage
V
GD
V
D
= Rated, Tc = 125°C
0.2
―
―
V
Holding Current
I
H
V
D
= 12V,
I
TM
= 1A
―
―
50
mA
Thermal Resistance
R
th (j
c)
Junction to Case, AC
―
―
2.5
°C / W
SM16GZ47
SM16JZ47
―
300
―
Critical Rate of Rise of
Off
State Voltage
SM16GZ47A
SM16JZ47A
dv / dt
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
―
200
―
V / μs
SM16GZ47
SM16JZ47
10
―
―
Critical Rate of Rise of
Off
State Voltage at
Commutation
SM16GZ47A
SM16JZ47A
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
8.7A / ms
4
―
―
V / μs
MARKING
* NUMBER
SYMBOL
MARK
* 1
Toshiba Product Mark
SM16GZ47, SM16GZ47A
M16GZ47
* 2
SM16JZ47, SM16JZ47A
M16JZ47
* 3
TYPE
SM16GZ47A, SM16JZ47A
A
* 4
Example
8A : January 1998
8B : February 1998
8L : December 1998
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|---|---|
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| SM16J45 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:AC POWER CONTROL APPLICATIONS |
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