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參數(shù)資料
| 型號： | SM12J45 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 196K |
| 代理商： | SM12J45 |
SM12G45,SM12J45,SM12G45A,SM12J45A
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off
State Current
I
DRM
V
DRM
=Rated, T
j
= 125°C
―
―
2
mA
I
T2 (+) , Gate (+)
―
―
2
II
T2 (+) , Gate (
)
―
―
2
III
T2 (
) , Gate (
)
―
―
2
SM12G45
SM12J45
IV
T2 (
) , Gate (+)
―
―
―
I
T2 (+) , Gate (+)
―
―
1.5
II
T2 (+) , Gate (
)
―
―
1.5
III
T2 (
) , Gate (
)
―
―
1.5
Gate Trigger
Voltage
SM12G45A
SM12J45A
IV
V
GT
V
D
= 12V,
R
L
= 20
T2 (
) , Gate (+)
―
―
―
V
I
T2 (+) , Gate (+)
―
―
30
II
T2 (+) , Gate (
)
―
―
30
III
T2 (
) , Gate (
)
―
―
30
SM12G45
SM12J45
IV
T2 (
) , Gate (+)
―
―
―
I
T2 (+) , Gate (+)
―
―
20
II
T2 (+) , Gate (
)
―
―
20
III
T2 (
) , Gate (
)
―
―
20
Gate Trigger
Current
SM12G45A
SM12J45A
IV
I
GT
V
D
= 12V,
R
L
= 20
T2 (
) , Gate (+)
―
―
―
mA
Peak On
State Voltage
V
TM
I
TM
= 17A
―
―
1.5
V
Gate Non
Trigger Voltage
V
GD
V
D
= Rated, Tc = 125°C
0.2
―
―
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
―
―
50
mA
Thermal Resistance
R
th (j
c)
Junction to Case, AC
―
―
1.8
°C / W
SM12G45
SM12J45
10
―
―
Critical Rate of Rise of
Off
State Voltage at
Commutation
SM12G45A
SM12J45A
(dv / dt) c
V
DRM
= 400V
(di / dt) c =
6.5A / ms
4
―
―
V / μs
MARKING
NUMBER
SYMBOL
MARK
SM12G45, SM12G45A
M12G45
*1
SM12J45, SM12J45A
M12J45
*2
TYPE
SM12G45A, SM12J45A
A
*3
Example
8A : January 1998
8B : February 1998
8L : December 1998
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| SM12J45(Q) | 制造商:Toshiba America Electronic Components 功能描述:Thyristor TRIAC 600V 132A 3-Pin(3+Tab) TO-220AB |
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