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參數(shù)資料
| 型號： | SLD301XT |
| 元件分類： | 激光器 |
| 英文描述： | 770 nm, LASER DIODE |
| 封裝： | M-273(LO-10), 8 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 84K |
| 代理商： | SLD301XT |
– 3 –
SLD301XT
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
IF – Forward current [mA]
0
250
500
0
100
200
Po
–
Optical
power
output
[mW]
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 50
°C
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
0
0.05
0.1
0
50
100
Po
–
Optical
power
output
[mW]
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 50
°C
Threshold current vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
1020304050
100
500
1000
Ith
–
Threshold
current
[mA]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
–30
–20
–10
0
102030
Radiation
intensity
(optional
scale)
Tth = 25
°C
PO = 90mW
PO = 60mW
PO = 30mW
Power depecdence of near field pattern
50
m
Radiation
intensity
(optional
scale)
Tth = 25
°C
PO = 90mW
PO = 75mW
PO = 50mW
PO = 25mW
Oscillation wavelength vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
1020304050
780
790
830
820
810
800
λp
–
Oscillation
wavelength
[nm]
PO = 90mW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLD302WT-21 | 798 nm, LASER DIODE |
| SLD303V | 770 nm, LASER DIODE |
| SLD303V-2 | 810 nm, LASER DIODE |
| SLD303WT | 770 nm, LASER DIODE |
| SLD303XT-2 | 810 nm, LASER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SLD302B | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:Block-type 200mW High Power Laser Diode |
| SLD302V | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:200mW High Power Laser Diode |
| SLD302V-1 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:200mW High Power Laser Diode |
| SLD302V-2 | 制造商: 功能描述: |
| SLD302V-21 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:200mW High Power Laser Diode |
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