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參數資料
| 型號： | SLD301V-25 |
| 元件分類： | 激光器 |
| 英文描述： | 810 nm, LASER DIODE |
| 封裝： | M-248 (LO-11), 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 69K |
| 代理商： | SLD301V-25 |
– 3 –
SLD301V
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
IF – Forward current [mA]
0
250
500
0
100
200
Po
–
Optical
power
output
[mW]
TC = –10
°C
TC = 0
°C
TC = 25
°C
TC = 50
°C
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
0
0.05
0.1
0
50
100
Po
–
Optical
power
output
[mW]
TC = –10
°C
TC = 0
°C
TC = 25
°C
TC = 50
°C
Threshold current vs. Temperature characteristics
Tc – Case temperature [
°C]
–10
0
1020304050
100
500
1000
Ith
–
Threshold
current
[mA]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
–30
–20
–10
0
102030
Radiation
intensity
(optional
scale)
TC = 25
°C
PO = 90mW
PO = 60mW
PO = 30mW
Power depecdence of near field pattern
50
m
Radiation
intensity
(optional
scale)
TC = 25
°C
PO = 90mW
PO = 75mW
PO = 50mW
PO = 25mW
Oscillation wavelength vs. Temperature characteristics
Tc – Case temperature [
°C]
–10
0
1020304050
780
790
830
820
810
800
λp
–
Oscillation
wavelength
[nm]
PO = 90mW
相關PDF資料 |
PDF描述 |
|---|---|
| SLD301WT-25 | 810 nm, LASER DIODE |
| SLD301WT-24 | 807 nm, LASER DIODE |
| SLD301XT-3 | 830 nm, LASER DIODE |
| SLD301XT-24 | 807 nm, LASER DIODE |
| SLD301XT | 770 nm, LASER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SLD301WT | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:100mW HIGH POWER LASER DIODE |
| SLD301XT | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:100mW High Power Laser Diode |
| SLD302B | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:Block-type 200mW High Power Laser Diode |
| SLD302V | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:200mW High Power Laser Diode |
| SLD302V-1 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:200mW High Power Laser Diode |
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