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參數(shù)資料
| 型號(hào)： | SLCD-61N3 |
| 元件分類(lèi)： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 25K |
| 代理商： | SLCD-61N3 |
SLCD-61N3
Solderable Planar Photodiode
Features
Visible and IR spectral response
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and linear
short circuit current over a wide range of illumination.
These devices are widely used for light sensing and
power generation because of their stability and high
efficiency.
They are particularly suited to power
conversion applications due to their low internal
impedance, relatively high shunt impedance, and
stability. These devices also provide a reliable and
inexpensive detector for instrumentation and light
beam sensing applications.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +125°C
Operating Temperature
-40
°C to +125°C
Cathode
Anode
Sensitive Area
(45.9 sq.mm.)
Dimensions in mm. (+/- 0.13)
10.16
0.4
5.08
Also available with leads as part number SLSD-71N3
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
1.3
2.1
mA
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2 (1)
ID
Reverse Dark Current
1.7
A
VR=5V, Ee=0
CJ
Junction Capacitance
1.0
nF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice
104112 REV 0
Notes: (1) Ee = light source @ 2854
°K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLCD-61N4 | PHOTO DIODE |
| SLSD-71N4 | PHOTO DIODE |
| SLCD-61N8 | PHOTO DIODE |
| SLCMT60 | ACTIVE DELAY LINE, TRUE OUTPUT, PSIP8 |
| SLCMG125 | ACTIVE DELAY LINE, TRUE OUTPUT, PSIP4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SLCD-61N3 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
| SLCD-61N4 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:5A; Diode Case Style:Planar; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:125C; SVHC:No SVHC ;RoHS Compliant: Yes |
| SLCD-61N4 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
| SLCD-61N5 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:3.3A; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:125C; Wavelength Typ:930nm ;RoHS Compliant: Yes |
| SLCD-61N5 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
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