
105
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re
(yfs)
-I
D
Characteristics (Typical)
R
DS(ON)
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
Characteristic curves
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
D(
pulse
)
–
60
±
20
–
5
V
V
A
A
–
10 (
PW
≤
1ms, duty
≤
25%
)
5 (
Ta=25
°
C, with all circuits operating, without heatsink
)
30 (
Tc=25
°
C,with all circuits operating, with infinite heatsink
)
25 (
Junction-Air, Ta=25
°
C, with all circuits operating
)
4.17 (
Junction-Case, Tc=25
°
C, with all circuits operating
)
1000 (
Between fin and lead pin, AC
)
150
–
40 to +150
W
θ
j-a
θ
j-c
V
ISO
Tch
Tstg
°
C/W
°
C/W
Vrms
°
C
°
C
P
T
I
Equivalent circuit diagram
Absolute maximum ratings
Electrical characteristics
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
R
DS(ON)
Ciss
Coss
Crss
td
(
on
)
t
r
td
(off)
t
f
V
SD
t
rr
–
60
V
nA
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
=
–
100
μ
A, V
GS
=0V
V
GS
=
±
20V
V
DS
=
–
60V, V
GS
=0V
V
DS
=
–
10V, I
D
=
–
250
μ
A
V
DS
=
–
10V, I
D
=
–
3A
V
GS
=
–
10V, I
D
=
–
3A
V
DS
=
–
10V,
f=1.0MHz,
V
GS
=0V
I
D
=
–
3A, V
DD
–
20V,
R
L
=6.67
,
V
GS
=
–
5V,
see Fig. 4 on page 16.
I
SD
=
–
5A, V
GS
=0V
I
SD
=3A, V
GS
=0V, di/dt=100A/
μ
s
±
100
–
100
–
2.0
–
1.0
4
6
0.14
790
310
90
40
110
160
80
–
1.0
85
0.22
–
1.5
Specification
typ
min
max
SLA5086
P-channel
General purpose
External dimensions
A
SLA (12-pin)
2
1
3
4
5
10
12
11
6
7
8
9
0
–
2
–
4
–
6
–
8
–
2
0
–
4
–
6
–
8
–
10
–
10
V
DS
(V)
I
D
(
(
T
a
=25
°
C
)
V
GS
=
–
2.5V
–
2.7V
–
3.0V
–
3.3V
–
3.5V
–
3.7V
–
1
–
4
0
–
1
–
2
–
3
–
4
–
5
V
GS
(V)
0
–
6
–
8
–
10
–
4
–
2
I
D
(
T
a
=125
°
C
25
°
C
–
40
°
C
(V
DS
=
–
10V)
0
–
6
–
8
–
2
–
4
–
10
0
0.10
0.05
0.15
0.20
0.30
0.25
I
D
(A)
R
D
(
)
(T
a
=25
°
C)
V
GS
=
–
10V
–
4V
00
–
0.5
–
1.0
–
1.5
–
10
–
8
–
6
I
D
(
V
SD
(V)
–
4
–
2
(T
a
=25
°
C)
–
4V
0
V
GS
=
–
10V
–
40
0
50
100
150
T
C
(
°
C)
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
R
D
(
)
V
GS
=
–
4V
–
10V
(I
D
=
–
3A)
–
0.05
0.1
–
0.1
–
1
1
I
D
(A)
R
50
10
–
10
(V
DS
=
–
10V)
T
a
=
–
40
°
C
125
°
C
25
°
C
0
–
10
–
20
–
30
–
40
–
50
10
100
1000
5000
V
DS
(V)
C
GS
=0V
V
(T
a
=25
°
C)
Ciss
Coss
Crss
–
0.1
–
1
–
10
–
100
–
0.1
–
1
–
20
–
10
I
D
(
V
DS
(V)
1m
1m
R
DS(ON
LMTED
100
μ
s
T
C
=25
°
C
1-Circuit Operation
25
40
35
30
15
20
10
5
0
0
50
100
150
T
a
(
°
C)
P
T
(
WthIninteHeasnk
Without Heatsink