
PRELIMINARY DATA SHEET SKY33100-360LF
Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc.com
200627 Rev. D Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice. August 10, 2007
3
0.20 Ref.
Seating Plane
Pin 1
Indicator
0.90 ± 0.10
2
Exposed Pad
0.90 + 0.10
0.90 - 0.15
1.70 + 0.10
1.70 - 0.15
0.45 + 0.05
0.45 - 0.07
0.85 + 0.05
0.85 - 0.07
0.25 + 0.05
0.25 - 0.07
0.30 + 0.01
0.50
QFN 8L 2 x 2 mm Package
Characteristic
Value
Input power
33 dBm
Operating temperature
-40 °C to +85 °C
Storage temperature
-40 °C to +125 °C
ESD
HBM
1000 V
Machine Model
1500 V
Absolute Maximum Ratings
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
CAUTION: Although this device is designed to be as robust as
possible, ESD (Electrostatic Discharge) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
Theory of Operation
Bulk acoustic wave (BAW) filters make use of very low loss
electromechanical resonators to perform very highly selective RF
filtering. The typical configuration for a BAW filter is the ladder
network, which contains series and shunt resonators with slightly
differing resonant frequencies to form a band pass filter with
steep near band rolloff.
BAW resonators consist of a thin film layer of piezoelectric material
sandwiched between two metal electrodes. These layers are formed
on top of an acoustic mirror comprised of several alternating layers
of high and low acoustic impedance materials, the composition and
thickness of which are both very tightly controlled.
Simplified BAW Resonator Cross Section
Top Electrode
Piezoelectric
Layer
Bottom
Electrode
Acoustic
Mirror
Layers
Silicon
Substrate
Part Marking (Top View)