參數(shù)資料
型號(hào): SKM600GB126D
廠商: SEMIKRON INTERNATIONAL
元件分類(lèi): 功率晶體管
英文描述: Trench IGBT Module
中文描述: 660 A, 1200 V, N-CHANNEL IGBT
封裝: CASE D 56, SEMITRANS 3, 7 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 677K
代理商: SKM600GB126D
SEMITRANS
3
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Preliminary Data
Features
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Typical Applications
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Remarks
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Characteristics
Symbol
Inverse diode
Conditions
min.
typ.
max.
Units
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SKM 600GB126D ...
2
11-09-2006 SEN
by SEMIKRON
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