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參數(shù)資料
| 型號(hào)： | SKM400GB128D |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 功率晶體管 |
| 英文描述： | SPT IGBT Module |
| 中文描述： | 565 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | CASE D 56, SEMITRANS 3, 7 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 709K |
| 代理商： | SKM400GB128D |
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
N -#
7K
N -#
7&D
N -F
7&5
N -2
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 400GB128D...
4
19-09-2005 RAA
by SEMIKRON
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKM400GB128D_06 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:SPT IGBT Module |
| SKM400GB12E4 | 制造商:SEMIKRON 功能描述:IGBT HALFBRIDGE MOD 400A 1200V 制造商:SEMIKRON 功能描述:IGBT, HALFBRIDGE, MOD, 400A, 1200V |
| SKM400GB12E4_10 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:IGBT4 Modules |
| SKM400GB12E4HD | 制造商:SEMIKRON 功能描述:IGBT, MODULE, 1.2KV, 616A; Transistor Polarity:Dual NPN; DC Collector Current:616A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C; Operating Temperature Max:175C |
| SKM400GB12T4 | 制造商:SEMIKRON 功能描述:POWER IGBT TRANSISTOR |
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