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參數(shù)資料
| 型號： | SKM300GB066D |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-ripple-rejection CMOS LDO Regulators for High-frequency Circuits; Output voltage (V): 3.1; Output current (mA): 150; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 250; Ripple rejection (dB): 80; Circuit current (µA): 60; Package: HVSOF5 |
| 中文描述： | 390 A, 600 V, N-CHANNEL IGBT |
| 封裝： | CASE D 56, SEMITRANS 3, 7 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 869K |
| 代理商： | SKM300GB066D |
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 CAL diode recovered charge
SKM 300GB066D
5
05-09-2006 SEN
by SEMIKRON
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| SKM300GB123D | 制造商:n/a 功能描述:IGBT Module |
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| SKM300GB124D | 制造商:n/a 功能描述:IGBT Module |
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