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參數(shù)資料
| 型號： | SKM300GAL123D |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT Modules |
| 中文描述： | 300 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | CASE D 57, SEMITRANS 3, 5 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 799K |
| 代理商： | SKM300GAL123D |
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
* , 5$
=-
* , 5$
=+
* , 5E P , 5$
=+;
* , 59 P , 5$
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 300GB123D
4
22-09-2005 RAA
by SEMIKRON
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SKM300GB123D | IGBT Modules |
| SKM300GB066D | High-ripple-rejection CMOS LDO Regulators for High-frequency Circuits; Output voltage (V): 3.1; Output current (mA): 150; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 250; Ripple rejection (dB): 80; Circuit current (µA): 60; Package: HVSOF5 |
| SKM300GB124D | Low Loss IGBT Modules |
| SKM300GB125D | Ultra Fast IGBT Module |
| SKM300GB126D | Trench IGBT Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKM300GAL123DH4 | 制造商:SEMIKRON 功能描述:POWER IGBT TRANSISTOR |
| SKM300GAL128D | 制造商:SEMIKRON 功能描述:IGBT MODULE CHOPPER 1200V |
| SKM300GAL12E4 | 制造商:SEMIKRON 功能描述:IGBT CHOPPER MODULE 300A 1200V |
| SKM300GAL12E4_0906 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:IGBT4 Modules |
| SKM300GAL12E4HD | 制造商:SEMIKRON 功能描述:IGBT, MODULE, 1.2KV, 422A; Transistor Polarity:NPN; DC Collector Current:422A; Collector Emitter Voltage Vces:1.85V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C; Operating Temperature Max:175C |
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