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參數(shù)資料
| 型號(hào)： | SKM200GAR125D |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra Fast IGBT Modules |
| 中文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | CASE D 57, SEMITRANS 3, 5 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 797K |
| 代理商： | SKM200GAR125D |
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
$ & 5
;'
$ & 5
;%
$ & 5F )P & 5 ,
;%2
$ & 59 )P & 5 ,
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 200GB125D
4
14-09-2005 RAA
by SEMIKRON
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| SKM200GAR163D | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:SEMITRANS IGBT Modules New Range |
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| SKM200GB063D | 制造商:SEMIKRON 功能描述:POWER IGBT TRANSISTOR |
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