參數(shù)資料
型號(hào): SKM200GAL126D
廠商: SEMIKRON INTERNATIONAL
元件分類(lèi): 功率晶體管
英文描述: Trench IGBT Modules
中文描述: 260 A, 1200 V, N-CHANNEL IGBT
封裝: CASE D57, SEMITRANS-7
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 749K
代理商: SKM200GAL126D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 10 Transient thermal impedance of FWD
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 200GB126D ...
3
14-09-2005 RAA
by SEMIKRON
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