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參數(shù)資料
| 型號： | SKIIP30NAB12 |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter |
| 中文描述： | 33 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | CASE M3, MINISKIIP-22 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 292K |
| 代理商： | SKIIP30NAB12 |
by SEMIKRON
0698
B 16 – 57
Absolute Maximum Ratings
Symbol
Conditions
1)
Inverter
(Chopper see SKiiP 22 NAB 12)
V
CES
V
GES
I
C
I
CM
I
F
= –I
C
I
FM
= –I
CM
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
Bridge Rectifier
V
RRM
I
D
I
FSM
I
t
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
T
j
T
stg
V
isol
AC, 1 min.
Values
Units
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
T
heatsink
= 25 / 80 °C
1200
± 20
45 / 30
90 / 60
38 / 26
76 / 52
V
V
A
A
A
A
T
heatsink
= 80 °C
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
1500
35
700
2400
V
A
A
A
2
s
°C
°C
V
– 40 . . . + 150
– 40 . . . + 125
2500
Characteristics
Symbol
IGBT - Inverter
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
IGBT - Chopper *
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
Diode
2)
- Inverter (Diode
2)
- Chopper see SKiiP 22 NAB 12)
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
per diode
Diode - Rectifier
V
F
R
thjh
per diode
Temperature Sensor
R
TS
T = 25 / 100 °C
Mechanical Data
M
1
Case
mechanical outline see page
B 16 – 9
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12
Conditions
1)
min.
typ.
max.
Units
I
C
= 30 A
T
j
= 25 (125)
°
C
V
CC
= 600 V; V
GE
= ± 15 V
I
C
= 30 A; T
j
= 125
°
C
R
gon
= R
goff
= 39
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
–
–
–
–
–
–
–
–
2,5(3,1)
55
55
400
45
7,8
2,0
–
3,0(3,7)
110
110
600
90
–
–
0,7
V
ns
ns
ns
ns
mJ
nF
K/W
I
C
= 15 A
T
j
= 25 (125)
°
C
V
CC
= 600 V; V
GE
= ± 15 V
I
C
= 15 A; T
j
= 125
°
C
R
gon
= R
goff
= 82
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
–
–
–
–
–
–
–
–
2,5(3,1)
55
45
400
70
4,0
1,0
–
3,0(3,7)
110
90
600
100
–
–
1,4
V
ns
ns
ns
ns
mJ
nF
K/W
I
F
= 25 A
T
j
= 125 °C
T
j
= 125 °C
I
F
= 25 A, V
R
= – 600 V
di
F
/dt = – 500 A/
μ
s
V
GE
= 0 V, T
j
= 125 °C
T
j
= 25 (125)
°
C
–
–
–
–
–
–
–
2,0(1,8)
1,0
32
25
4,5
1,0
–
2,5(2,3)
1,2
44
–
–
–
1,2
V
V
m
A
μ
C
mJ
K/W
I
F
= 35 A, T
j
= 25 °C
–
–
1,2
–
–
1,6
V
K/W
1000 / 1670
case to heatsink, SI Units
2
–
M3
2,5
Nm
SKiiP 31 NAB 12
MiniSKiiP 3
SEMIKRON integrated
intelligent Power
SKiiP 31 NAB 12
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics B 16 – 4
Options
also available with powerful
chopper. For characteristics
please refer to Inverter IGBT
1)
T
heatsink
= 25 °C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
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