參數(shù)資料
型號: SK30GB123
廠商: SEMIKRON INTERNATIONAL
元件分類: IGBT 晶體管
英文描述: IGBT Module
中文描述: 33 A, 1200 V, N-CHANNEL IGBT
封裝: CASE T8, SEMITOP 2, 5 PIN
文件頁數(shù): 2/5頁
文件大小: 667K
代理商: SK30GB123
SEMITOP
2
IGBT Module
SK30GB123
SK30GAL123
SK30GAR123
Preliminary Data
Features
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Typical Applications
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GAL
GAR
Characteristics
Symbol
Inverse Diode
0
A
+ 0
1
Conditions
min.
typ.
max.
Units
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SK30GB123
2
08-03-2007 SCT
by SEMIKRON
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