參數(shù)資料
型號： SIR67-21C/L9/TR10
廠商： EVERLIGHT ELECTRONICS CO LTD
元件分類： 紅外LED
英文描述： 1 ELEMENT, INFRARED LED, 875 nm
封裝： ROHS COMPLIANT, MINIATURE, PLASTIC, SMD, 2 PIN
文件頁數(shù)： 1/10頁
文件大?。?/td> 178K
代理商： SIR67-21C/L9/TR10
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 2
Page: 1 of 10
Device No：DTS-672-063
Prepared date：08-22-2005
Prepared by：JAINE TSAI
Technical Data Sheet
Top Infrared LED
SIR67-21C/L9/TR10
Features
Peak wavelength λp=875nm.
Low forward voltage.
Compatible with infrared and vapor phase reflow solder process.
Pb free
The product itself will remain within RoHS compliant version.
Descriptions
SIR67-21C/L9/TR10 is an infrared emitting diode in miniature SMD package
which is molded in a water clear plastic with flat top view lens.
The device is spectrally matched with silicon photodiode and phototransistor.
Applications
Floppy disk drive
Optoelectronic switch
Camera
VCR
Video
Smoke detector
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
SIR
GaAlAs
Water clear
相關(guān)PDF資料
PDF描述
SIR67-21C/TR8 2.4 mm, 1 ELEMENT, INFRARED LED, 875 nm
SIR91-21C/TR7 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm
SIR95-21C/TR7 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm
SK44LT/R7 4 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB
SK6070C 60 A, 70 V, SILICON, RECTIFIER DIODE, TO-247AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SIR67-21C-TR8 制造商:EVERLIGHT 制造商全稱:Everlight Electronics Co., Ltd 功能描述:Top Infrared LED
SIR688DP-T1-GE3 制造商:Vishay Semiconductors 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 60V 3.5MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 60V 60A 8-SO 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 60V 3.5mohm@10V
SIR698DP-T1-GE3 功能描述:MOSFET 100V 7.5A 23W 195mOhm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SIR770DP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SIR770DP-T1-GE3 功能描述:MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*