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參數(shù)資料
| 型號(hào)： | SIM-20ST |
| 元件分類： | 紅外LED |
| 英文描述： | 1.85 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 59K |
| 代理商： | SIM-20ST |
SIM-20ST
Sensors
Rev.A
1/2
Infrared light emitting diode, side-view type
SIM-012SB
The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with
φ1.85 lens.
Applications
Light source for sensors
Features
1) Compact package (4.4x4.3 mm) with lens.
2) High efficiency, high output PO = 7mW (IF = 50 mA).
3) Emission spectrum well suited to silicon detectors
(
λP = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Dimensions (Unit : mm)
14Min.
(2.54)
2.0
0.5
0.45
1.5
±
0.1
0.5Max.
4.4
±
0.1
0.5Max.
1.5
4.3
±0.1
3.9
±0.1
3.2
±
0.1
Gate
remainder
Resin coating
Notes:
1. Tolerances are
±0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
1 Cathode
2 Anode
0.4
2°±
1°
0.4
0.53
4°±
1°
Absolute maximum ratings (Ta=25
°C)
Electrical and optical characteristics (Ta=25
°C)
Parameter
Symbol
IE
VF
IR
λP
λ
θ1/2
tr
tf
Min.
Typ.
7.5
1.3
950
40
15
1.0
Max.
1.6
10
Unit
IF
50mA
IF
50mA
VR
3V
IF
50mA
IF
50mA
IF
50mA
IF
50mA
mW/sr
V
A
nm
deg
s
fc
1.0
IF
50mA
MHz
Conditions
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Parameter
Symbol
PD
IF
IFP
VR
Topr
Tstg
Limits
25 to +85
30 to +100
50
5
80
0.5
Unit
mA
V
mW
A
°C
Pulse width = 0.1 ms, duty ratio 1%
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SIM-20STL | 制造商:ROHM Semiconductor 功能描述: |
| SIM-20STM | 制造商:ROHM Semiconductor 功能描述:SIM-20ST Series 1.6 V 950 nm Infrared Light Emitting Diodes Side View Type 制造商:ROHM 功能描述:SIM-20ST Series 1.6 V 950 nm Infrared Light Emitting Diodes Side View Type |
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