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參數(shù)資料
| 型號(hào)： | SIGC121T120R2C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 78K |
| 代理商： | SIGC121T120R2C |
SIGC121T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7171-M, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology 200μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
integrated gate resistor
Chip Type
This chip is used for:
power module
BSM 75GD120DN2
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-
A4682-A003
SIGC121T120R2C 1200V
75A
11.08 X 11.08 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
11.08 X 11.08
Emitter pad size
8 x ( 2.99 x 1.97 )
Gate pad size
1.46 x 0.8
Area total / active
122.8 / 99.6
mm
2
Thickness
200
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
106 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC121T120R2CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T60NR2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC128T170R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC12T120 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip |
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