- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299897 > SIA3329-270 1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR, SMD PDF資料下載
參數(shù)資料
| 型號(hào)： | SIA3329-270 |
| 元件分類： | 通用定值電感 |
| 英文描述： | 1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR, SMD |
| 封裝： | CHIP, 3329M, ROHS COMPLIANT |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 201K |
| 代理商： | SIA3329-270 |
1. Tolerance of inductance
K: 10%(0.9~100uH).
2. Ireated is the DC current which cause the inductance drop less than 10% of its nominal inductance without current and the
o
surface temperature of the part increase less than 45 C.
oo
C
3. Operating temperature : -20
to 105
(including self-temperature rise).
SMT Power Inductor
SIA3329 Type
Features
RoHS compliant.
mounting.
Low profile (2.9mm max. hight) SMD type.
Unshielded.
Self-leads, suitable for high density
High energy storage and low DCR.
Provided with embossed carrier tape packing.
Ideal for power source circuits, DC-DC converter,
DC-AC inverters inductor application.
In addition to the standard versions shown here,
customized inductors are available to meet your exact requirements.
0.7
3.5
DELTA ELECTRONICS, INC.
(TAOYUAN PLANT CPBG)
14
Electrical Characteristics :
Mechanical Dimension:
252, SAN YING ROAD, KUEISAN INDUSTRIAL ZONE, TAOYUAN SHIEN, 333, TAIWAN, R.O.C.
TEL: 886-3-3591968; FAX: 886-3-3591991
http://www.deltaww.com
A
C
3.9
B
E
D
0.01
0.10
1.00
10.00
CURRENT (A)
0.10
1.00
10.00
100.00
IN
D
U
C
T
A
N
C
E
(u
H
)
101
680
1R4
6R8
8R2
120
180
270
470
820
560
390
330
220
150
100
4R7
5R6
3R0
2R7
0R9
4R0
2R0
1R7
1R2
At 25
: 100KHz, 0.1V
oC
UNIT:mm/inch
A = 3.35
0.2/0.132
0.008
B = 2.85
0.2/0.112
0.008
C = 2.9/0.114 Max.
D = 2.6
0.2/0.102
0.008
E = 1.1/0.043 Min.
SIA3329-0R9
0.9
0.038
3.00
SIA3329-1R2
1.2
0.050
2.90
SIA3329-1R5
1.5
0.055
2.50
SIA3329-1R8
1.8
0.062
2.30
SIA3329-2R2
2.2
0.075
2.10
SIA3329-2R7
2.7
0.095
1.80
SIA3329-3R3
3.3
0.110
1.70
SIA3329-3R9
3.9
0.130
1.40
SIA3329-4R7
4.7
0.150
1.30
SIA3329-5R6
5.6
0.170
1.20
SIA3329-6R8
6.8
0.195
1.10
SIA3329-8R2
8.2
0.230
1.00
SIA3329-100
10.0
0.290
0.95
SIA3329-120
12.0
0.375
0.85
SIA3329-150
15.0
0.450
0.75
SIA3329-180
18.0
0.590
0.70
SIA3329-220
22.0
0.680
0.64
SIA3329-270
27.0
0.820
0.58
SIA3329-330
33.0
1.160
0.50
SIA3329-390
39.0
1.210
0.48
SIA3329-470
47.0
1.400
0.45
SIA3329-560
56.0
1.780
0.40
SIA3329-680
68.0
2.020
0.36
SIA3329-820
82.0
2.240
0.32
SIA3329-101
100.0
3.150
0.29
SIA3329-151
150.0
4.600
0.24
PART NO.
L
(uH)
1
DCR
( ) MAX
Irated
(Adc)
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SIA3329-1R8 | 1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR, SMD |
| SIA3329-180 | 1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR, SMD |
| SIA3329-151 | 1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR, SMD |
| SIA3329-150 | 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD |
| SIA3329-120 | 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIA400EDJ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIA400EDJ-T1-GE3 | 功能描述:MOSFET 30V 12A 19.2W 19mOhms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIA406DJ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 12-V (D-S) MOSFET |
| SIA406DJ-T1-GE3 | 功能描述:MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIA408DJ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。