
Si9945AEY
Vishay Siliconix
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
www.vishay.com FaxBack 408-970-5600
2-1
Dual N-Channel 60-V (D-S), 175 C MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.080 @ V
GS
= 10 V
3.7
0.100 @ V
GS
= 4.5 V
3.4
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
D
2
G
2
S
2
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 175 C)
a
T
A
= 25 C
I
D
3.7
A
T
A
= 70 C
3.2
Pulsed Drain Current
I
DM
25
Continuous Source Current (Diode Conduction)
a
I
S
2
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.4
W
T
A
= 70 C
1.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typ
Max
Unit
Junction-to-Ambienta
t
10 sec
R
thJA
62.5
C/W
Steady State
93
Notes
a.
Surface Mounted on 1” x 1” FR4 Board
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