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參數(shù)資料
| 型號： | SI9426 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | MINIATURE POWER RELAY |
| 中文描述： | 單N通道，2.5V的MOSFET的指定 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 49K |
| 代理商： | SI9426 |
SI9426DY Rev A (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= 16 V,
V
DS
= 16 V, V
GS
= 0 V, T
J
=55
°
C
V
GS
= 8 V,
V
DS
= 0 V
V
GS
= –8 V
V
DS
= 0 V
20
V
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V
1
10
100
–100
μ
A
I
GSSF
I
GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A,T
J
=125
°
C
V
GS
= 4.5 V,
V
GS
= 4.5 V,I
D
= 10.5 A,T
J
=125
°
C
V
GS
=2.7 V, I
D
= 10 A
V
GS
= 4.5 V,
V
DS
= 5 V,
0.4
0.3
0.6
0.5
12
17
14
1.5
0.8
13.5
24
16
V
R
DS(on)
Static Drain–Source
On–Resistance
I
D
= 10.5 A
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 10.5 A
30
A
S
43
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2150
890
165
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
11
26
145
40
43
7
8
30
55
220
100
60
ns
ns
ns
ns
nC
nC
nC
V
DS
= 5 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 10.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.1
1.2
A
V
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.6
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
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相關代理商/技術參數(shù) |
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| SI9426DY | 功能描述:MOSFET SO8 NCH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SI9430DT-T1 | 制造商:Vishay Siliconix 功能描述: |
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