
Si9121
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2
Document Number: 71112
S-00802—Rev. B, 08-May-00
V
NEG
V
CS
V
CC
I
LX
(peak current )
V
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bypass, CS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(V
LX
– V
CS
) internal power MOSFET
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–63 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
NEG
–0.3 V to V
CC
+ 0.3 V
V
NEG
+ 13.2 V
3 A
6 V
V
NEG
–0.3 V to V
CC
+0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
70 V
–65 to 150 C
Operating Junction Temperature
150 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)
a
8-Pin SOIC (Y Suffix)
b
1.25 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Impedance (
8-Pin SOIC
Notes
a.
Device mounted with all leads soldered or welded to PC board.
b.
Derate 10 mW/ C above 25 C.
JA
)
a
100 C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those ndicated n the operational sections of the specifications s not mplied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
V
NEG
V
CC
(internally regulated)
–10 V to –60 V
V
NEG
+ 8.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
CC
(externally supplied)
Digital Inputs
V
NEG
+ 9.5 V to V
NEG
+ 12.0 V
. . . . . . . . . . . . . . . .
0 V to V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L = 68 H, C
OUT
= 220 F // 0.1 F, CIN = 33 F, C
BYPASS
= 0.1 F, C
VCC
= 1 F, R
SENSE
= 0.25 , 0.5 W
(All
Voltages Are With Respect To V
NEG
Unless Otherwise Specified)
Test Conditions (Internally Regulated)
Unless Otherwise Specified
Symbol
V
NEG
= –10 to –60 V
Limits
–40 to 85 C
Typ
d
Parameter
Temp
b
Min
c
Max
c
Unit
Output Voltage (with respect to GND = 0 V)
+5-V Converter
V
OUT
10 mA <I
LOAD
< 250 mA
Full
4.80
5.00
5.20
V
+3.3-V Converter
Full
3.17
3.30
3.43
Line Regulation (with respect to GND = 0 V)
Line Regulation
–60 V
V
NEG
–40 V
Full
1
%
V
CC
(Internal Regulator)
V
CC
Bias Voltage
UVLO
V
CC
Full
7.5
8.5
9.5
V
Under Voltage Lockout
V
CC
–
V
NEG
Turn-On
Full
6.6
7.6
8.7
V
Hysteresis
V
Room
0.6
Soft-Start
Error Amplifier Start-Up Current
I
SS
V
OUT
= 0 V
Room
10
A
Oscillator
Switching Frequency
f
OSC
Room
80
95
110
kHz
Error Amplifier
Transconductance
gm
Room
10
15
20
umho
Clamp Voltage
V
CL
Internal Error Amplifier
Output Clamp Voltage
Room
3.5
V
Current Limit
Threshold Voltage
V
CS
Full
0.57
0.67
0.77
V
MOSFET Switch
N-Channel MOSFET
r
DS(on)
Room
1.5
2.5