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參數(shù)資料
| 型號： | SI8401DB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Single P-Channel MOSFET; |
| 中文描述： | 單P溝道MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 83K |
| 代理商： | SI8401DB |
Si8401DB
Vishay Siliconix
www.vishay.com
2
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.45
0.9
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
1
A
V
DS
=
20 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
4.5 V
5
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
4.5 V, I
D
=
1 A
0.057
0.065
V
GS
=
2.5 V, I
D
=
1 A
0.080
0.095
Forward Transconductance
a
g
fs
V
DS
=
10
V, I
D
=
1 A
6
S
Diode Forward Voltage
a
V
SD
I
S
=
1 A, V
GS
= 0 V
0.73
1.1
V
Dynamic
b
Total Gate Charge
Q
g
11
17
Gate-Source Charge
Q
gs
V
DS
=
10 V,
V
GS
=
4.5 V, I
D
=
1 A
2.1
nC
Gate-Drain Charge
Q
gd
2.9
Turn-On Delay Time
t
d(on)
17
25
Rise Time
t
r
V
=
10 V, R
= 10
1 A, V
GEN
=
4.5 V, R
G
= 6
28
45
Turn-Off Delay Time
t
d(off)
I
D
88
135
ns
Fall Time
t
f
60
90
Source-Drain Reverse Recovery Time
t
rr
I
F
=
A, di/dt = 100 A/ s
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
= 5 thru 2.5 V
25 C
T
C
= 125 C
2 V
55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI8401DB-T1 | 功能描述:MOSFET 20V 4.9A 1.47W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8401DB-T1-E1 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8401DB-T1-E3 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8401DB-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI-8401L | 制造商:Sanken Electric Co Ltd 功能描述:Switching Mode Regulator 4-Pin 制造商:Sanken Electric Co Ltd 功能描述:IC REG BUCK 5V 0.5A EI-12.5 |
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