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參數(shù)資料
| 型號： | SI7846DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 150-V (D-S) MOSFET |
| 中文描述： | N溝道150 -五（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 63K |
| 代理商： | SI7846DP |
FEATURES
TrenchFET Power MOSFETS
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
PWM Optimized for Fast Switching
100% R
g
Tested
APPLICATIONS
Primary Side Switch for High Density DC/DC
Telecom/Server 48-V DC/DC
Industrial and 42-V Automotive
Si7846DP
Vishay Siliconix
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
1
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
150
0.050 @ V
GS
= 10 V
6.7
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Ordering Information: Si7846DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.7
4.0
T
A
= 70 C
5.4
3.3
Pulsed Drain Current
I
DM
50
A
Avalanch Current
L = 0.1 mH
I
AS
25
Continuous Source Current (Diode Conduction)
a
I
S
4.3
1.6
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.2
1.9
W
T
A
= 70 C
3.3
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
19
24
Steady State
52
65
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
1.5
1.8
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7846DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7846DP-T1 | 功能描述:MOSFET 150V 6.7A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7846DP-T1-E3 | 功能描述:MOSFET 150V 6.7A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7846DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7846DP-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:MOSFET; 150V N-Channel 50MOHM@QOV PWM Optimized |
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