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參數(shù)資料
| 型號(hào)： | SI7476DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S) Fast Switching MOSFET |
| 中文描述： | N通道40 - V（下局副局長(zhǎng)）快速開關(guān)MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | SI7476DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Automotive*
12-V Boardnet
High-Side Switches
Motor Drives
*Contact factory for automotive qualification
Si7476DP
Vishay Siliconix
New Product
Document Number: 72569
S-40577—Rev. B, 29-Mar-04
www.vishay.com
1
N-Channel 40-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
40
0.0053 @ V
GS
= 10 V
0.0066 @ V
GS
= 4.5 V
25
23
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Ordering Information:
Si7476DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
25
15
T
A
= 70 C
20
12
Pulsed Drain Current
I
DM
80
A
Continuous Source Current (Diode Conduction)
a
I
S
4.5
1.6
Avalanche Current
I
AS
60
Avalanche Energy
E
AS
180
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
18
23
Steady State
52
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.3
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7476DP-T1-E3 | 功能描述:MOSFET 40V 25A 5.4W 5.3mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7476DP-T1-GE3 | 功能描述:MOSFET 40V 25A 5.4W 5.3mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7478DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI7478DP-T1-E3 | 功能描述:MOSFET 60V 20A 5.4W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7478DP-T1-GE3 | 功能描述:MOSFET 60V 20A 5.4W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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