參數(shù)資料
型號(hào)： SI7447DP
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 30-V (D-S) MOSFET
中文描述： P溝道30V的MOSFET
文件頁數(shù)： 2/5頁
文件大?。?/td> 45K
代理商： SI7447DP
Si7447DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71970
S-21475
—
Rev. A, 26-Aug-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
V
V
DS
= 0 V, V
GS
=
20
V
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
25
V
200
nA
V
DS
= -24 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V, T
J
= 70 C
-10
A
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -24 A
0.0047
0.006
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -24 A
50
S
Diode Forward Voltage
a
V
SD
I
S
= -2.9 A, V
GS
= 0 V
-0.71
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
113
170
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -24 A
17
nC
Gate-Drain Charge
Q
gd
32.5
Turn-On Delay Time
t
d(on)
25
40
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
20
30
Turn-Off Delay Time
t
d(off)
I
D
180
270
ns
Fall Time
t
f
130
200
Gate Resistance
R
g
4
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.9 A, di/dt = 100 A/ s
100
150
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 5 V
25 C
T
C
= 125 C
-55 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
4 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7448DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI7448DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI7448DP-T1 功能描述:MOSFET 20V 22A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7448DP-T1-E3 功能描述:MOSFET 20V 22A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7448DP-T1-GE3 功能描述:MOSFET 20V 22A 5.2W 6.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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