- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368618 > Si7439DP-T1-E3 (Vishay Intertechnology,Inc.) P-Channel 150-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | Si7439DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 150-V (D-S) MOSFET |
| 中文描述： | P通道150 -五（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI7439DP-T1-E3 |
Si7439DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
a.
Surface Mounted on 1” x 1” FR4 Board.
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
2.0
4.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
150 V, V
GS
= 0 V
1
A
V
DS
=
150 V, V
GS
= 0 V, T
J
= 70 C
10
On-State Drain Current
a
I
D(on)
V
DS
=
10 V, V
GS
=
10 V
30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
5.2 A
0.073
0.090
V
GS
=
6 V, I
D
=
5.0 A
0.077
0.095
Forward Transconductance
a
g
fs
V
DS
=
15
V, I
D
=
5.2 A
19
S
Diode Forward Voltage
a
V
SD
I
S
=
4.2 A, V
GS
= 0 V
0.78
1.2
V
Dynamic
b
Total Gate Charge
Q
g
88
135
Gate-Source Charge
Q
gs
V
DS
=
75 V,
V
GS
=
10 V, I
D
=
5.2 A
17.5
nC
Gate-Drain Charge
Q
gd
26.5
Gate Resistance
R
g
1.5
3
4.5
Turn-On Delay Time
t
d(on)
25
40
Rise Time
t
r
V
=
75 V, R
L
= 15.5
4.8 A, V
GEN
=
10 V, R
g
= 6
46
70
Turn-Off Delay Time
t
d(off)
I
D
115
180
ns
Fall Time
t
f
64
100
Source-Drain Reverse Recovery Time
t
rr
I
F
=
2.9 A, di/dt = 100 A/ s
100
150
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
= 10 thru 5 V
25 C
T
C
= 125 C
55 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7445DP | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7446DP | SPICE Device Model Si7446DP |
| SI7447DP | P-Channel 30-V (D-S) MOSFET |
| SI7452DP | N-Channel 60-V (D-S) Fast Switching MOSFET |
| SI7456DP | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7439DP-T1-GE3 | 功能描述:MOSFET 150V 5.2A 5.4W 90mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7440DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7440DP-T1 | 功能描述:MOSFET 30V 21A 5.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7440DP-T1-E3 | 功能描述:MOSFET 30V 21A 5.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7440DP-T1-GE3 | 功能描述:MOSFET 30V 21A 5.4W 6.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。