參數資料
型號: SI7403BDN
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述: P通道20 - V(下局副局長)MOSFET的低閾值
文件頁數: 6/8頁
文件大小: 115K
代理商: SI7403BDN
Si7403BDN
Vishay Siliconix
New Product
www.vishay.com
6
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
2
4
6
8
10
25
50
75
100
125
150
0
2
4
6
8
10
12
0
25
50
75
100
125
150
Package Limited
Current De-Rating*
Power De-Rating
I
D
T
C
Case Temperature ( C)
T
C
Case Temperature ( C)
P
*The power dissipation P
is based on T
= 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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相關代理商/技術參數
參數描述
SI7403BDN-T1-E3 功能描述:MOSFET 20V 8.0A 9.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7403BDN-T1-GE3 功能描述:MOSFET 20V 8.0A 9.6W 74mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7403DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI7403DN-T1 功能描述:MOSFET 20V 4.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7404DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET