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參數(shù)資料
| 型號： | SI7348DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | SI7348DP |
Si7348DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72129
S-03591—Rev. A, 31-Mar-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 14 A
0.010
0.0125
V
GS
= 4.5 V, I
D
= 11 A
0.016
0.020
Forward Transconductance
a
g
fs
V
DS
= 6 V, I
D
= 14 A
19
S
Diode Forward Voltage
a
V
SD
I
S
= 3.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
5.7
8.5
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 14 A
2.2
nC
Gate-Drain Charge
Q
gd
2.0
Gate Resistance
R
g
1.3
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 10 V, R
G
= 6
17
30
Turn-Off Delay Time
t
d(off)
I
D
37
60
ns
Fall Time
t
f
11
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0
1
2
3
4
5
6
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 5 V
25 C
T
C
= -55 C
125 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
4 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7348DPT1E3 | 制造商:Vishay Intertechnologies 功能描述: |
| SI7356ADP-T1-E3 | 功能描述:MOSFET 30V 40A 83W 3.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7356ADP-T1-GE3 | 功能描述:MOSFET 30V 40A 83W 3.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7356DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI7356DP-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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